Please use this identifier to cite or link to this item:
|Title:||Coulomb drag and high-resistivity behavior in double-layer graphene|
Lopes Dos Santos, J.M.B.
Castro Neto, A.H.
|Citation:||Peres, N.M.R., Lopes Dos Santos, J.M.B., Castro Neto, A.H. (2011-07). Coulomb drag and high-resistivity behavior in double-layer graphene. EPL 95 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1209/0295-5075/95/18001|
|Abstract:||We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on-and-off ratio for current flow by tuning the external gate voltage. Hence, although graphene remains semi-metallic, the double-layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double-layer graphene samples in disordered SiO2 substrates. Copyright © 2011 EPLA.|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 12, 2018
WEB OF SCIENCETM
checked on Oct 17, 2018
checked on Oct 26, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.