Coulomb drag and high-resistivity behavior in double-layer graphene

Please use this identifier to cite or link to this item: https://doi.org/10.1209/0295-5075/95/18001

Title:	Coulomb drag and high-resistivity behavior in double-layer graphene
Authors:	Peres, N.M.R. Lopes Dos Santos, J.M.B. Castro Neto, A.H.
Issue Date:	Jul-2011
Citation:	Peres, N.M.R., Lopes Dos Santos, J.M.B., Castro Neto, A.H. (2011-07). Coulomb drag and high-resistivity behavior in double-layer graphene. EPL 95 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1209/0295-5075/95/18001
Abstract:	We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on-and-off ratio for current flow by tuning the external gate voltage. Hence, although graphene remains semi-metallic, the double-layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double-layer graphene samples in disordered SiO2 substrates. Copyright © 2011 EPLA.
Source Title:	EPL
URI:	http://scholarbank.nus.edu.sg/handle/10635/96119
ISSN:	02955075
DOI:	10.1209/0295-5075/95/18001
Appears in Collections:	Staff Publications

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