Please use this identifier to cite or link to this item: https://doi.org/10.1209/0295-5075/95/18001
Title: Coulomb drag and high-resistivity behavior in double-layer graphene
Authors: Peres, N.M.R.
Lopes Dos Santos, J.M.B.
Castro Neto, A.H. 
Issue Date: Jul-2011
Citation: Peres, N.M.R., Lopes Dos Santos, J.M.B., Castro Neto, A.H. (2011-07). Coulomb drag and high-resistivity behavior in double-layer graphene. EPL 95 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1209/0295-5075/95/18001
Abstract: We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on-and-off ratio for current flow by tuning the external gate voltage. Hence, although graphene remains semi-metallic, the double-layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double-layer graphene samples in disordered SiO2 substrates. Copyright © 2011 EPLA.
Source Title: EPL
URI: http://scholarbank.nus.edu.sg/handle/10635/96119
ISSN: 02955075
DOI: 10.1209/0295-5075/95/18001
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