Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/96000
Title: CNDO calculation of energies of Ga atom ejection from defect sites on the GaP(110) surface
Authors: Ong, C.K. 
Khoo, G.S.
Hattori, K.
Nakai, Y.
Itoh, N.
Issue Date: 2-Dec-1991
Source: Ong, C.K.,Khoo, G.S.,Hattori, K.,Nakai, Y.,Itoh, N. (1991-12-02). CNDO calculation of energies of Ga atom ejection from defect sites on the GaP(110) surface. Surface Science 259 (3) : L787-L790. ScholarBank@NUS Repository.
Abstract: We have carried out a semi-empirical quantum mechanical calculation of the energy needed to eject a Ga atom from several types of defect sites on the GaP(110) surface. It is shown that the energy needed to remove a Ga atom from defect sites increases according to the sequence: a P(Ga) antisite, a GaP divacancy, a P vacancy, an adatom, a kink site on the surface and a Ga vacancy. All of which the energy lies in the region below 3 eV, and hence ejection of a Ga atom from each of these defects can be induced at least energetically by localization of two electron-hole pairs on a defect site. © 1991.
Source Title: Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/96000
ISSN: 00396028
Appears in Collections:Staff Publications

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