Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0921-5107(00)00481-5
Title: Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% Cu and Ti on SiO2
Authors: Lee, Y.K.
Maung Latt, K.
Li, S.
Osipowicz, T. 
Chiam, S.Y. 
Issue Date: 7-Aug-2000
Source: Lee, Y.K., Maung Latt, K., Li, S., Osipowicz, T., Chiam, S.Y. (2000-08-07). Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% Cu and Ti on SiO2. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 77 (1) : 101-105. ScholarBank@NUS Repository. https://doi.org/10.1016/S0921-5107(00)00481-5
Abstract: It was reported that the reaction between Al and Ti takes place and Al3Ti compound is formed during the annealing at 500 °C. Annealing at higher temperatures, such as 550 and 600 °C, the Al3Ti compound transforms to Al5Ti2. It is believed that the Al5Ti2 is thermodynamically stable comparing with Al3Ti. In the present research, the interfacial reactions in Al-0.5 wt.% Cu/Ti/SiO2/Si structure have been investigated in the samples prepared by ionized metal plasma (IMP) and then annealed at various temperatures from 200 to 600 °C for 30 min in Argon ambient. The results obtained by Rutherford backscattering spectroscopy and transmission electron microscopy show that there is a Ti layer (52 nm in thickness) between Al5Ti2 and SiO2 and there is no formation of the ternary compound - AlxTiySiz, which is detrimental in the contact metallization layer. It indicates that the Ti layer deposited by IMP technique acts as a barrier to retard the reaction between Al5Ti2 and SiO2 and consequentially protect the contact metallization layer.
Source Title: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/95961
ISSN: 09215107
DOI: 10.1016/S0921-5107(00)00481-5
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