Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4734507
Title: Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation
Authors: Wang, Y.
Zhang, D.H.
Chen, X.Z.
Jin, Y.J.
Li, J.H.
Liu, C.J. 
Wee, A.T.S. 
Zhang, S.
Ramam, A.
Issue Date: 9-Jul-2012
Citation: Wang, Y., Zhang, D.H., Chen, X.Z., Jin, Y.J., Li, J.H., Liu, C.J., Wee, A.T.S., Zhang, S., Ramam, A. (2012-07-09). Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation. Applied Physics Letters 101 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4734507
Abstract: We report bonding and diffusion behavior of nitrogen incorporated into InSb wafer by two-step implantation. Three nitrogen-containing regions, i.e., a surface accumulation region, a uniform region, and a tail region, were observed in the samples after post annealing. X-ray photoelectron spectroscopy measurements at different depths reveal that majority of the nitrogen forms In-N bonds in the uniform region but exists as interstitial defects in the tail region. The diffusion coefficients of nitrogen in InSb were obtained by fitting the modified Fick's law with experimental data and the activation energy of 0.55 ± 0.04 eV extracted confirms the interstitial dominating diffusion of nitrogen in the InSb wafer. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/95879
ISSN: 00036951
DOI: 10.1063/1.4734507
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