Please use this identifier to cite or link to this item:
|Title:||Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication|
|Citation:||Zhao, F.F.,Chen, S.Y.,Shen, Z.X.,Gao, X.S.,Zheng, J.Z.,See, A.K.,Chan, L.H. (2003-03). Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (2) : 862-867. ScholarBank@NUS Repository.|
|Abstract:||The use of micro-Raman spectroscopy as a powerful technique for the study of a variety of problems related to metal salicides for Si device fabrication is discussed. The technique is advantageous in providing information about phase, film thickness, film orientation, and stress all at the same time. Local orientations of the NiSi grains are investigated using relative intensity of the NiSi Raman peaks with micron spatial resolution which provides complementary information to the space-averaged x-ray diffraction results.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 1, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.