Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/95812
Title: Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication
Authors: Zhao, F.F.
Chen, S.Y.
Shen, Z.X. 
Gao, X.S. 
Zheng, J.Z.
See, A.K.
Chan, L.H.
Issue Date: Mar-2003
Source: Zhao, F.F.,Chen, S.Y.,Shen, Z.X.,Gao, X.S.,Zheng, J.Z.,See, A.K.,Chan, L.H. (2003-03). Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (2) : 862-867. ScholarBank@NUS Repository.
Abstract: The use of micro-Raman spectroscopy as a powerful technique for the study of a variety of problems related to metal salicides for Si device fabrication is discussed. The technique is advantageous in providing information about phase, film thickness, film orientation, and stress all at the same time. Local orientations of the NiSi grains are investigated using relative intensity of the NiSi Raman peaks with micron spatial resolution which provides complementary information to the space-averaged x-ray diffraction results.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/95812
ISSN: 10711023
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

19
checked on Feb 17, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.