Please use this identifier to cite or link to this item:
|Title:||Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors|
|Authors:||Liu, Z.W. |
|Citation:||Liu, Z.W., Yeo, S.W., Ong, C.K. (2007-10). Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors. Journal of Materials Research 22 (10) : 2668-2675. ScholarBank@NUS Repository. https://doi.org/10.1557/jmr.2007.0364|
|Abstract:||N-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn3N2) films, which were fabricated by reactive magnetron sputtering. Both n- and p-type conductions were obtained in these ZnO:N and ZnO:AlN films. Optimal oxidation treatments for achieving p-type ZnO are annealing at 400-600 °C for 10-60 min, depending on the film thickness and morphology. The electric properties were found to be very sensitive to the annealing conditions and film structure. As-deposited (Zn + Zn3N2) films with and without Al addition had carrier concentrations of 1021-1022 cm-3. After conversion to ZnO, the n-type films had a carrier concentrations up to 1019 cm-3, whereas the p-type ZnO:N films had hole concentrations of 1014-1016 cm-3. (Al,N)-codoping increased the hole concentration of p-type film to 1018 cm-3 despite a decrease in Hall mobility. The photoluminescence properties of the p-type ZnO films were also investigated. The synthesis of p-type ZnO:AlN by oxidative annealing is believed to provide an alternative approach to realize p-type conduction in codoped ZnO film by using N2 as the N source. © 2007 Materials Research Society.|
|Source Title:||Journal of Materials Research|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 11, 2018
WEB OF SCIENCETM
checked on Oct 23, 2018
checked on Nov 9, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.