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|Title:||Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors|
|Authors:||Liu, Z.W. |
|Citation:||Liu, Z.W., Yeo, S.W., Ong, C.K. (2007-10). Achieve p-type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors. Journal of Materials Research 22 (10) : 2668-2675. ScholarBank@NUS Repository. https://doi.org/10.1557/jmr.2007.0364|
|Abstract:||N-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn3N2) films, which were fabricated by reactive magnetron sputtering. Both n- and p-type conductions were obtained in these ZnO:N and ZnO:AlN films. Optimal oxidation treatments for achieving p-type ZnO are annealing at 400-600 °C for 10-60 min, depending on the film thickness and morphology. The electric properties were found to be very sensitive to the annealing conditions and film structure. As-deposited (Zn + Zn3N2) films with and without Al addition had carrier concentrations of 1021-1022 cm-3. After conversion to ZnO, the n-type films had a carrier concentrations up to 1019 cm-3, whereas the p-type ZnO:N films had hole concentrations of 1014-1016 cm-3. (Al,N)-codoping increased the hole concentration of p-type film to 1018 cm-3 despite a decrease in Hall mobility. The photoluminescence properties of the p-type ZnO films were also investigated. The synthesis of p-type ZnO:AlN by oxidative annealing is believed to provide an alternative approach to realize p-type conduction in codoped ZnO film by using N2 as the N source. © 2007 Materials Research Society.|
|Source Title:||Journal of Materials Research|
|Appears in Collections:||Staff Publications|
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