Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0218-625X(01)00136-1
Title: A study on electroluminescence from Au/Ge-containing silicon oxide/p-Si and Au/Si-rich silicon oxide/p-Si structures
Authors: Ma, S.Y.
Guo, Y.P. 
Wang, Y.Y.
Liu, X.Q.
Issue Date: 2001
Source: Ma, S.Y.,Guo, Y.P.,Wang, Y.Y.,Liu, X.Q. (2001). A study on electroluminescence from Au/Ge-containing silicon oxide/p-Si and Au/Si-rich silicon oxide/p-Si structures. Surface Review and Letters 8 (5) : 483-486. ScholarBank@NUS Repository. https://doi.org/10.1016/S0218-625X(01)00136-1
Abstract: Ge-containing silicon oxide (GSO) films (5-15 nm) and Si-rich silicon oxide (SSO) films (5-15 nm) were deposited using the RF magnetron sputtering technique with a Ge-SiO2 and a Si-SiO2 composite target, respectively. The Au/GSO/p-Si and Au/SSO/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both of the Au/GSO/p-Si and Au/SSO/p-Si structures have rectifying behavior. All the EL spectra from the two types of the structure have almost unchanged peak positions around 650 nm (∼ 1.9 eV) and are independent of applied forward biases. The EL mechanisms for the Au/GSO/p-Si and Au/SSO/p-Si structures have been discussed.
Source Title: Surface Review and Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/95691
ISSN: 0218625X
DOI: 10.1016/S0218-625X(01)00136-1
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