Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn205089u
Title: The SAM, not the electrodes, dominates charge transport in metal-monolayer//Ga 2O 3/gallium-indium eutectic junctions
Authors: Reus, W.F.
Thuo, M.M.
Shapiro, N.D.
Nijhuis, C.A. 
Whitesides, G.M.
Keywords: charge transport
junctions
molecular electronics
molecular rectification
self-assembled monolayers
Issue Date: 26-Jun-2012
Citation: Reus, W.F., Thuo, M.M., Shapiro, N.D., Nijhuis, C.A., Whitesides, G.M. (2012-06-26). The SAM, not the electrodes, dominates charge transport in metal-monolayer//Ga 2O 3/gallium-indium eutectic junctions. ACS Nano 6 (6) : 4806-4822. ScholarBank@NUS Repository. https://doi.org/10.1021/nn205089u
Abstract: Figure Persented: The liquid-metal eutectic of gallium and indium (EGaIn) is a useful electrode for making soft electrical contacts to self-assembled monolayers (SAMs). This electrode has, however, one feature whose effect on charge transport has been incompletely understood: a thin (approximately 0.7 nm) film-consisting primarily of Ga 2O 3-that covers its surface when in contact with air. SAMs that rectify current have been measured using this electrode in Ag TS-SAM//Ga 2O 3/EGaIn (where Ag TS = template-stripped Ag surface) junctions. This paper organizes evidence, both published and unpublished, showing that the molecular structure of the SAM (specifically, the presence of an accessible molecular orbital asymmetrically located within the SAM), not the difference between the electrodes or the characteristics of the Ga 2O 3 film, causes the observed rectification. By examining and ruling out potential mechanisms of rectification that rely either on the Ga 2O 3 film or on the asymmetry of the electrodes, this paper demonstrates that the structure of the SAM dominates charge transport through Ag TS-SAM// Ga 2O 3/EGaIn junctions, and that the electrical characteristics of the Ga 2O 3 film have a negligible effect on these measurements. © 2012 American Chemical Society.
Source Title: ACS Nano
URI: http://scholarbank.nus.edu.sg/handle/10635/95583
ISSN: 19360851
DOI: 10.1021/nn205089u
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