Please use this identifier to cite or link to this item: https://doi.org/10.1021/ja805090z
Title: Solution-gated epitaxial graphene as pH sensor
Authors: Ang, P.K. 
Chen, W. 
Wee, A.T.S. 
Kian, P.L. 
Issue Date: 5-Nov-2008
Citation: Ang, P.K., Chen, W., Wee, A.T.S., Kian, P.L. (2008-11-05). Solution-gated epitaxial graphene as pH sensor. Journal of the American Chemical Society 130 (44) : 14392-14393. ScholarBank@NUS Repository. https://doi.org/10.1021/ja805090z
Abstract: A solution-gate field effect transistor (SGFET) has been fabricated on few-layer graphene (FLG). The ideally polarizable graphene/aqueous electrolyte interface allows the capacitive charging of the surface by hydroxyl (OH-) and hydroxonium ions (H3O+). The conductivity versus gate potential curve exhibits "V" shaped ambipolar transfer characteristics of graphene, with hole and electron mobilities of 3600 cm2/Vs and 2100 cm2/Vs, respectively. The shift of the negative gate potential with pH shows a supra-Nernstian response of 99 meV/pH. Our work points to the potential application of graphene in ultrafast and ultralow noise chemical or biological sensors. Copyright © 2008 American Chemical Society..
Source Title: Journal of the American Chemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/94842
ISSN: 00027863
DOI: 10.1021/ja805090z
Appears in Collections:Staff Publications

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