Please use this identifier to cite or link to this item:
|Title:||Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate)/MoO 3 composite layer for efficient and stable hole injection in organic semiconductors|
|Citation:||Zhao, Y., Chen, J., Chen, W., Ma, D. (2012-02-15). Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate)/MoO 3 composite layer for efficient and stable hole injection in organic semiconductors. Journal of Applied Physics 111 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3687933|
|Abstract:||We report a composite hole injection layer (HIL) composed of an ultrathin film of MoO 3on poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) for efficient and stable hole injection in organic semiconductors. The optimized thickness of MoO 3 layer was determined to be about 0.5 nm, which was enough to increase the work function of the underlying films substantially. The composite HIL can inject holes efficiently into a variety of hole transport layers (HTLs), even that with very deep highest occupied molecular orbital (HOMO) levels. Moreover, the utilization of PEDOT:PSS/MoO 3 composite HIL greatly improved the stability of hole injection in organic devices, as compared to those based on pure PEDOT:PSS or MoO 3 HILs, beneficial to practical applications. © 2012 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 11, 2018
WEB OF SCIENCETM
checked on Jul 3, 2018
checked on Mar 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.