Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3687933
Title: Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate)/MoO 3 composite layer for efficient and stable hole injection in organic semiconductors
Authors: Zhao, Y.
Chen, J.
Chen, W. 
Ma, D.
Issue Date: 15-Feb-2012
Source: Zhao, Y., Chen, J., Chen, W., Ma, D. (2012-02-15). Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate)/MoO 3 composite layer for efficient and stable hole injection in organic semiconductors. Journal of Applied Physics 111 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3687933
Abstract: We report a composite hole injection layer (HIL) composed of an ultrathin film of MoO 3on poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) for efficient and stable hole injection in organic semiconductors. The optimized thickness of MoO 3 layer was determined to be about 0.5 nm, which was enough to increase the work function of the underlying films substantially. The composite HIL can inject holes efficiently into a variety of hole transport layers (HTLs), even that with very deep highest occupied molecular orbital (HOMO) levels. Moreover, the utilization of PEDOT:PSS/MoO 3 composite HIL greatly improved the stability of hole injection in organic devices, as compared to those based on pure PEDOT:PSS or MoO 3 HILs, beneficial to practical applications. © 2012 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/94549
ISSN: 00218979
DOI: 10.1063/1.3687933
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