Please use this identifier to cite or link to this item: https://doi.org/10.1038/nature12763
Title: Face-to-face transfer of wafer-scale graphene films
Authors: Gao, L.
Ni, G.-X.
Liu, Y.
Liu, B.
Castro Neto, A.H. 
Loh, K.P. 
Issue Date: 2014
Citation: Gao, L., Ni, G.-X., Liu, Y., Liu, B., Castro Neto, A.H., Loh, K.P. (2014). Face-to-face transfer of wafer-scale graphene films. Nature 505 (7482) : 190-194. ScholarBank@NUS Repository. https://doi.org/10.1038/nature12763
Abstract: Graphene has attracted worldwide interest since its experimental discovery, but the preparation of large-area, continuous graphene film on SiO 2/Si wafers, free from growth-related morphological defects or transfer-induced cracks and folds, remains a formidable challenge. Growth of graphene by chemical vapour deposition on Cu foils has emerged as a powerful technique owing to its compatibility with industrial-scale roll-to-roll technology. However, the polycrystalline nature and microscopic roughness of Cu foils means that such roll-to-roll transferred films are not devoid of cracks and folds. High-fidelity transfer or direct growth of high-quality graphene films on arbitrary substrates is needed to enable wide-ranging applications in photonics or electronics, which include devices such as optoelectronic modulators, transistors, on-chip biosensors and tunnelling barriers. The direct growth of graphene film on an insulating substrate, such as a SiO 2/Si wafer, would be useful for this purpose, but current research efforts remain grounded at the proof-of-concept stage, where only discontinuous, nanometre-sized islands can be obtained. Here we develop a face-to-face transfer method for wafer-scale graphene films that is so far the only known way to accomplish both the growth and transfer steps on one wafer. This spontaneous transfer method relies on nascent gas bubbles and capillary bridges between the graphene film and the underlying substrate during etching of the metal catalyst, which is analogous to the method used by tree frogs to remain attached to submerged leaves. In contrast to the previous wet or dry transfer results, the face-to-face transfer does not have to be done by hand and is compatible with any size and shape of substrate; this approach also enjoys the benefit of a much reduced density of transfer defects compared with the conventional transfer method. Most importantly, the direct growth and spontaneous attachment of graphene on the underlying substrate is amenable to batch processing in a semiconductor production line, and thus will speed up the technological application of graphene. © 2014 Macmillan Publishers Limited.
Source Title: Nature
URI: http://scholarbank.nus.edu.sg/handle/10635/93791
ISSN: 00280836
DOI: 10.1038/nature12763
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

168
checked on Sep 17, 2018

WEB OF SCIENCETM
Citations

191
checked on Sep 17, 2018

Page view(s)

29
checked on Jul 6, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.