Please use this identifier to cite or link to this item: https://doi.org/10.1021/la4033282
Title: Fabrication of highly transparent and conductive indium-tin oxide thin films with a high figure of merit via solution processing
Authors: Chen, Z.
Li, W.
Li, R.
Zhang, Y.
Xu, G. 
Cheng, H.
Issue Date: 12-Nov-2013
Citation: Chen, Z., Li, W., Li, R., Zhang, Y., Xu, G., Cheng, H. (2013-11-12). Fabrication of highly transparent and conductive indium-tin oxide thin films with a high figure of merit via solution processing. Langmuir 29 (45) : 13836-13842. ScholarBank@NUS Repository. https://doi.org/10.1021/la4033282
Abstract: Deposition technology of transparent conducting oxide (TCO) thin films is critical for high performance of optoelectronic devices. Solution-based fabrication methods can result in substantial cost reduction and enable broad applicability of the TCO thin films. Here we report a simple and highly effective solution process to fabricate indium-tin oxide (ITO) thin films with high uniformity, reproducibility, and scalability. The ITO films are highly transparent (90.2%) and conductive (ρ = 7.2 × 10-4 Ω·cm) with the highest figure of merit (1.19 × 10 -2 Ω-1) among all the solution-processed ITO films reported to date. The high transparency and figure of merit, low sheet resistance (30 Ω/sq), and roughness (1.14 nm) are comparable with the benchmark properties of dc sputtering and can meet the requirements for most practical applications. © 2013 American Chemical Society.
Source Title: Langmuir
URI: http://scholarbank.nus.edu.sg/handle/10635/93789
ISSN: 07437463
DOI: 10.1021/la4033282
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