Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1286201
Title: Alternative NH4F/HCl solution for ultraclean Si(001) surface
Authors: Bok, T.H.
Ye, J.H.
Li, S.F.Y. 
Issue Date: Sep-2000
Citation: Bok, T.H., Ye, J.H., Li, S.F.Y. (2000-09). Alternative NH4F/HCl solution for ultraclean Si(001) surface. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 18 (5) : 2542-2548. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1286201
Abstract: Wet chemical cleaning of silicon was investigated by scanning tunneling microscopy and total reflection X-ray fluorescence spectrometry. Metallic impurities on silicon surface were found to occur via electrochemical reaction between metal ions and silicon substrate as the redox potentials of the metals were more positive than Si/SiO2. Complex reactions between chloride and metal ions resulted in less metal deposition on silicon surfaces.
Source Title: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
URI: http://scholarbank.nus.edu.sg/handle/10635/93071
ISSN: 07342101
DOI: 10.1116/1.1286201
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