Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/92996
Title: A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)2Ni(DMIT)2 thin films
Authors: Han, M.Y. 
Huang, W. 
Keywords: DMIT
Molecular switching
Thin films
Issue Date: 30-Jun-1997
Source: Han, M.Y.,Huang, W. (1997-06-30). A reversible electrical memory switching and its microscopic mechanism in amorphous (NCTA)2Ni(DMIT)2 thin films. Materials Chemistry and Physics 49 (2) : 179-183. ScholarBank@NUS Repository.
Abstract: A reversible and reproducible bistable electrical memory switching phenomenon was observed in an asymmetrical sandwich structure with coherent electrodeposited amorphous thin films between Al and indium tin oxide electrodes based on a new type of molecular semiconductor (NCTA)2Ni(DMIT)2. It can be achieved between a high-impedance OFF state and a low-impedance ON state simply by changing the polarity of an applied electric field across the device. The electrical memory switching process is described in detail, and a plausible microscopic switching mechanism is proposed based on the formation and deformation of mixed-valence semiconductor through electric field-induced solid-state redox reaction resulting from a negative fractional charge withdrawing and injecting process.
Source Title: Materials Chemistry and Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/92996
ISSN: 02540584
Appears in Collections:Staff Publications

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