Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication

Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1503791

Title:	Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication
Authors:	Sin, C.-Y. Chen, B.-H. Loh, W.L. Yu, J. Yelehanka, P. See, A. Chan, L.
Issue Date:	Sep-2002
Citation:	Sin, C.-Y., Chen, B.-H., Loh, W.L., Yu, J., Yelehanka, P., See, A., Chan, L. (2002-09). Resist trimming in high-density CF4/O2 plasmas for sub-0.1 μm device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (5) : 1974-1981. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1503791
Abstract:	Through investigation of the effect of various process parameters on resist trimming, it is found that the resist trimming is a neutral-driven etching and trim rate can be enhanced by ion-assisted etching. The microloading effect is affected by process parameters in the same way as trim rate; it increases when the trim rate increases. This indicates that the microloading effect is caused by the chemical component of trimming.
Source Title:	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI:	http://scholarbank.nus.edu.sg/handle/10635/92306
ISSN:	10711023
DOI:	10.1116/1.1503791
Appears in Collections:	Staff Publications

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