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| Title: | Photoconductivity in poly[[o-(trimethylsilyl)phenyl]acetylene] | Authors: | Kang, E.T. Neoh, K.G. Masuda, T. Higashimura, T. Yamamoto, M. |
Keywords: | hole transport photoconductivity poly[[o-(trimethylsilyl)phenyl]acetylene] thin film |
Issue Date: | Jul-1989 | Citation: | Kang, E.T.,Neoh, K.G.,Masuda, T.,Higashimura, T.,Yamamoto, M. (1989-07). Photoconductivity in poly[[o-(trimethylsilyl)phenyl]acetylene]. Polymer 30 (7) : 1328-1331. ScholarBank@NUS Repository. | Abstract: | Steady-state photoconductivity was studied in thin films of poly[[o-(trimethylsilyl)phenyl]acetylene], or poly(o-Me3SiPA) sandwiched between SnO2 and metal electrodes. Both the dark current density (Jd) and photocurrent density (Jph) depend superlinearly on the applied electric field. Jph also shows a superlinear dependence on light intensity. However, Jd and Jph are only weak functions of temperature at temperatures below room temperature. We conclude that the photoconductivity in poly(o-Me3SiPA) arises mainly from trap-modulated carrier photoemission from electrodes and the polymer is capable of effective transport of holes. © 1989. | Source Title: | Polymer | URI: | http://scholarbank.nus.edu.sg/handle/10635/91629 | ISSN: | 00323861 |
| Appears in Collections: | Staff Publications |
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