Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.153
Title: Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline silicon
Authors: Chan, H.Y.
Nordlund, K.
Gossmann, H.-J.L.
Harris, M.
Montgomery, N.J.
Mulcahy, C.P.A.
Biswas, S.
Srinivasan, M.P. 
Benistant, F.
Ng, C.M.
Chan, L.
Keywords: Electronic stopping
Interatomic potential
Molecular dynamics
Nuclear stopping
Issue Date: 10-May-2006
Citation: Chan, H.Y., Nordlund, K., Gossmann, H.-J.L., Harris, M., Montgomery, N.J., Mulcahy, C.P.A., Biswas, S., Srinivasan, M.P., Benistant, F., Ng, C.M., Chan, L. (2006-05-10). Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline silicon. Thin Solid Films 504 (1-2) : 121-125. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.153
Abstract: Prediction of the final dopant positions after ion implantation has always been strongly influenced by the choice of stopping models. A molecular dynamics (MD) method is used in this work; the nuclear stopping is treated by accurate pair potentials calculated by density functional theory (DFT). The slowing down due to collisions with electrons will be described by both a non-local semi-empirical model and a local model based on Fermi level phase shift factors. Comparisons with experimental data using both models show that a local pair-specific electronic stopping model is essential in accurately predicting range profiles for any element even at low implant energies where nuclear effects are dominant. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/90627
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.09.153
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