WORM-type device with rectifying effect based on a conjugated copolymer of fluorene and europium complex

Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2800775

Title:	WORM-type device with rectifying effect based on a conjugated copolymer of fluorene and europium complex
Authors:	Tan, Y.P. Song, Y. Teo, E.Y.H. Ling, Q.D. Lim, S.L. Lo, P.G.Q. Chan, D.S.H. Kang, E.T. Zhu, C.
Issue Date:	2008
Citation:	Tan, Y.P., Song, Y., Teo, E.Y.H., Ling, Q.D., Lim, S.L., Lo, P.G.Q., Chan, D.S.H., Kang, E.T., Zhu, C. (2008). WORM-type device with rectifying effect based on a conjugated copolymer of fluorene and europium complex. Journal of the Electrochemical Society 155 (1) : H17-H20. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2800775
Abstract:	We report a nonvolatile, write-once-read-many-times (WORM) memory device based on a simple organic-inorganic heterojunction. The organic-based hybrid used is 9,9-dihexylfluorene and Eu-complexed benzoate, which contains both electron-donor (9, 9″ -dihexylfluorene) and electron-acceptor (europium complex) groups. Under current-voltage testing, the device is able to switch from one initial nonconducting state to a conducting state once a threshold voltage is reached. Diode rectifying characteristics, with a current ratio of four orders of magnitude, is also observed after the device is turned on, which is essential to address one memory cell in large passive matrix circuits. © 2007 The Electrochemical Society.
Source Title:	Journal of the Electrochemical Society
URI:	http://scholarbank.nus.edu.sg/handle/10635/90499
ISSN:	00134651
DOI:	10.1149/1.2800775
Appears in Collections:	Staff Publications

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