Please use this identifier to cite or link to this item:
|Title:||The impact of boron halo on phosphorus junction formation and stability|
|Citation:||Yeong, S.H., Colombeau, B., Mok, K.R.C., Benistant, F., Chan, L., Srinivasan, M.P. (2008). The impact of boron halo on phosphorus junction formation and stability. Electrochemical and Solid-State Letters 11 (7) : H179-H181. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2912009|
|Abstract:||In this paper we study the diffusion and activation behaviors of ultrashallow and high concentration of phosphorus (P) dopants in silicon processed with low-temperature thermal annealing. For the first time, significant improvement in dopant activation is observed when a boron halo implant is incorporated in the germanium preamorphized P junction. Our results are discussed in terms of the interactions between dopants and the point defects upon annealing. In addition, no rapid deactivation behavior is observed for the P-doped junction during the isochronal annealing cycle. © 2008 The Electrochemical Society.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.