Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.056
Title: Study of interactions between α-Ta films and SiO2 under rapid thermal annealing
Authors: Yuan, Z.L. 
Zhang, D.H.
Li, C.Y.
Prasad, K.
Tan, C.M.
Keywords: α-Ta
Cu metallization
Diffusion barrier
Rapid thermal annealing
SiO2
Issue Date: Sep-2004
Source: Yuan, Z.L., Zhang, D.H., Li, C.Y., Prasad, K., Tan, C.M. (2004-09). Study of interactions between α-Ta films and SiO2 under rapid thermal annealing. Thin Solid Films 462-463 (SPEC. ISS.) : 279-283. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.056
Abstract: The interactions between α-Ta films and SiO2 after being annealed in the temperature range of 650-850 °C in Ar ambient have been studied using X-ray diffraction (XRD) and sheet resistance measurements. The thermal-induced products are dependent on the annealing temperatures. Under low temperature annealing, the α-Ta films are oxidized at the top and the bottom with increasing sheet resistance, and the oxygen source mainly comes from the annealing ambient and some which dissolved in α-Ta films. Free oxygen and silicon atoms released from SiO2 substrate enhance the formation of Ta oxide and generate Ta silicides under higher temperature annealing. The formation of two kinds of Ta silicides depends on the quantities of Ta atoms and free Si atoms from SiO2 at the interface. These interfacial reactions result in the increasing sheet resistance till the formation of dominate TaSi2. The oxidized Ta(N) interlayer could play an additional barrier on the diffusion of Ta and released Si atoms to improve the thermal stability of α-Ta films. © 2004 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/90220
ISSN: 00406090
DOI: 10.1016/j.tsf.2004.05.056
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