Preparation of SnO2/MCM-41 semiconducter sensors with MOCVD and their properties

Abstract

SnO2/MCM-41 semiconductor sensors were prepared by metallorganic chemical vapor deposition (MOCVD). The amount of deposition, specific surface area and pore distribution of SnO2/MCM-41 depend on the deposition time and temperatures. The fact that pore size are closely related with the amount of deposition indicates that SnO2 is coated smoothly in the pore of MCM-41. SnO2/MCM-41 sensor has high sensitivities for CO and H2. The sensitivities show a linear relation with the concentration of CO and H2.