Please use this identifier to cite or link to this item: https://doi.org/10.1002/pola.24633
Title: Growing poly(N-vinylcarbazole) from the surface of graphene oxide via RAFT polymerization
Authors: Zhang, B.
Chen, Y.
Xu, L.
Zeng, L.
He, Y.
Kang, E.-T. 
Zhang, J.
Keywords: functionalization of polymers
graphene oxide
nanotechnology
nonvolatile rewritable memory
poly(N-vinylcarbazole)
radical polymerization
reversible addition fragmentation chain transfer (RAFT)
synthesis
Issue Date: 1-May-2011
Source: Zhang, B., Chen, Y., Xu, L., Zeng, L., He, Y., Kang, E.-T., Zhang, J. (2011-05-01). Growing poly(N-vinylcarbazole) from the surface of graphene oxide via RAFT polymerization. Journal of Polymer Science, Part A: Polymer Chemistry 49 (9) : 2043-2050. ScholarBank@NUS Repository. https://doi.org/10.1002/pola.24633
Abstract: A new approach on usage of S-1-dodecyl-Sâ€2-(α, αâ€2-dimethyl-αâ€3-acetic acid) trithiocarbonate (DDAT)-covalently functionalized graphene oxide (GO) as reversible addition fragmentation chain transfer (RAFT) agent for growing of poly(N-vinylcarbazole) (PVK) directly from the surface of GO was described. The PVK polymer covalently grafted onto GO has Mn of 8.05 à - 103, and a polydispersity of 1.43. The resulting material PVK-GO shows a good solubility in organic solvents when compared to GO, and a significant energy bandgap of â̂/2.49 eV. Bistable electrical switching and nonvolatile rewritable memory effect, with a turn-on voltage of about -1.7 V and an ON/OFF state current ratio in excess of 103, are demonstrated in the Al/PVK-GO/ITO structure. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011 A new "grafting from" method to grow poly(N-vinylcarbazole) from the surface of graphene oxide via RAFT polymerization is described. This material was successfully used to fabricate a nonvolatile memory device, which exhibited a typical bistable electrical switching and rewritable memory effect. Copyright © 2011 Wiley Periodicals, Inc.
Source Title: Journal of Polymer Science, Part A: Polymer Chemistry
URI: http://scholarbank.nus.edu.sg/handle/10635/89040
ISSN: 0887624X
DOI: 10.1002/pola.24633
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