Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2008.05.327
Title: Electroless plating of copper on polyimide films modified by surface-initiated atom-transfer radical polymerization of 4-vinylpyridine
Authors: Li, L.
Yan, G.
Wu, J.
Yu, X.
Guo, Q.
Kang, E. 
Keywords: 4-Vinylpyridine
Copper
Electroless plating
Polyimide
Surface-initiated ATRP
Issue Date: 15-Sep-2008
Citation: Li, L., Yan, G., Wu, J., Yu, X., Guo, Q., Kang, E. (2008-09-15). Electroless plating of copper on polyimide films modified by surface-initiated atom-transfer radical polymerization of 4-vinylpyridine. Applied Surface Science 254 (22) : 7331-7335. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2008.05.327
Abstract: Surface modification of polyimide (PI) films were first carried out by chloromethylation under mild conditions, followed by surface-initiated atom-transfer radical polymerization (ATRP) of 4-vinylpyridine (4VP) from the chloromethylated PI surfaces. The composition and topography of the PI surfaces modified by poly(4-vinylpyridine) (P4VP) were characterized by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), respectively. The P4VP brushes with well-preserved pyridine groups on the PI surface was used not only as the chemisorption sites for the palladium complexes without prior sensitization by SnCl2 solution during the electroless plating of copper, but also as an adhesion promotion layer to enhance the adhesion of the electrolessly deposited copper to the PI surfaces. The T-peel adhesion strength of the electrolessly deposited copper on the modified PI surface could reach about 6.6 N/cm. Effects of the polymerization time and the activation time in the PdCl2 solution on the T-peel adhesion strength of the electrolessly deposited copper in the Sn-free process to the modified PI surface were also studied. © 2008 Elsevier B.V. All rights reserved.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/88824
ISSN: 01694332
DOI: 10.1016/j.apsusc.2008.05.327
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