Please use this identifier to cite or link to this item: https://doi.org/10.4028/0-87849-471-5.17
Title: Morphology and crystal quality of InAs QDs grown by MOVPE using different grqwth modes
Authors: Yin, Z.
Tang, X.
Zhang, J. 
Deny, S.
Teng, J.
Du, A.
Chin, M.K.
Keywords: Crystal quality
Growth modes
Morphology
MOVPE
Quantum dots
Issue Date: 2008
Source: Yin, Z.,Tang, X.,Zhang, J.,Deny, S.,Teng, J.,Du, A.,Chin, M.K. (2008). Morphology and crystal quality of InAs QDs grown by MOVPE using different grqwth modes. Advanced Materials Research 31 : 17-19. ScholarBank@NUS Repository. https://doi.org/10.4028/0-87849-471-5.17
Abstract: Morphology and crystal-quality of InAs/In0.53Ga 0.47As/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy (MOVPE) in N2 ambient using different growth modes have been studied. It is found that the morphology and crystal-quality of InAs QDs are dependant on the growth modes. After optimizing the dots' growth modes, dots' size dispersion and crystal-quality are both improved greatly, resulting in the enhancement factor of ∼ 2.9 in the photoluminescence (PL) peak-intensity from single QD. When the dots are buried, the dot size decrease compared with the free-standing dots due to the soon capping layer deposition during dots' being buried. The thermal activation energy measured is comparable to the valence-band offset in the QD system calculated by 8 kp theory model. This indicates the PL quenching induced by the interface defects is suppressed due to the defect density lowering in the QDs grown by such optimized growth mode.
Source Title: Advanced Materials Research
URI: http://scholarbank.nus.edu.sg/handle/10635/86933
ISBN: 0878494715
ISSN: 10226680
DOI: 10.4028/0-87849-471-5.17
Appears in Collections:Staff Publications

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