Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.067
Title: Effects of Si(001) surface amorphization on ErSi2 thin film
Authors: Tan, E.J.
Kon, M.L.
Pey, K.L.
Lee, P.S.
Zhang, Y.W. 
Wang, W.D.
Chi, D.Z.
Keywords: Amorphization
Erbium silicide
Morphology
Thin film
Issue Date: 10-May-2006
Citation: Tan, E.J., Kon, M.L., Pey, K.L., Lee, P.S., Zhang, Y.W., Wang, W.D., Chi, D.Z. (2006-05-10). Effects of Si(001) surface amorphization on ErSi2 thin film. Thin Solid Films 504 (1-2) : 157-160. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.067
Abstract: In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphization implant. It was found that the ErSi2 thin film becomes smoother but less textured and less epitaxial with Si(001) with increasing degree of the Si surface amorphization. In addition, an increased oxygen penetration during rapid thermal annealing occurs with increasing substrate amorphization. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/86878
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.09.067
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