Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.jmmm.2007.03.190
| Title: | Zn-interstitial-enhanced ferromagnetism in Cu-doped ZnO films | Authors: | Herng, T.S. Lau, S.P. Yu, S.F. Chen, J.S. Teng, K.S. |
Keywords: | Copper-doped zinc oxide Defect Diluted magnetic semiconductor Ferromagnetism |
Issue Date: | Aug-2007 | Citation: | Herng, T.S., Lau, S.P., Yu, S.F., Chen, J.S., Teng, K.S. (2007-08). Zn-interstitial-enhanced ferromagnetism in Cu-doped ZnO films. Journal of Magnetism and Magnetic Materials 315 (2) : 107-110. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2007.03.190 | Abstract: | Copper-doped ZnO (ZnO:Cu) films exhibiting room-temperature (RT) ferromagnetism were prepared by filtered cathodic vacuum arc (FCVA) technique. The ZnO:Cu films deposited at RT showed the strongest magnetic moment of 0.40 μB/Cu as compared with the samples prepared at elevated temperatures. The observed strong ferromagnetism in the RT-deposited ZnO:Cu films could be partly associated with Zn-interstitial defects. The degradation of magnetic moment in the ZnO:Cu prepared at high temperatures and annealed at elevated temperatures might be attributed to the out-diffusion of Zn interstitials to the ZnO lattice. © 2007 Elsevier B.V. All rights reserved. | Source Title: | Journal of Magnetism and Magnetic Materials | URI: | http://scholarbank.nus.edu.sg/handle/10635/86850 | ISSN: | 03048853 | DOI: | 10.1016/j.jmmm.2007.03.190 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.