Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jmmm.2007.03.190
Title: Zn-interstitial-enhanced ferromagnetism in Cu-doped ZnO films
Authors: Herng, T.S.
Lau, S.P.
Yu, S.F.
Chen, J.S. 
Teng, K.S.
Keywords: Copper-doped zinc oxide
Defect
Diluted magnetic semiconductor
Ferromagnetism
Issue Date: Aug-2007
Citation: Herng, T.S., Lau, S.P., Yu, S.F., Chen, J.S., Teng, K.S. (2007-08). Zn-interstitial-enhanced ferromagnetism in Cu-doped ZnO films. Journal of Magnetism and Magnetic Materials 315 (2) : 107-110. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2007.03.190
Abstract: Copper-doped ZnO (ZnO:Cu) films exhibiting room-temperature (RT) ferromagnetism were prepared by filtered cathodic vacuum arc (FCVA) technique. The ZnO:Cu films deposited at RT showed the strongest magnetic moment of 0.40 μB/Cu as compared with the samples prepared at elevated temperatures. The observed strong ferromagnetism in the RT-deposited ZnO:Cu films could be partly associated with Zn-interstitial defects. The degradation of magnetic moment in the ZnO:Cu prepared at high temperatures and annealed at elevated temperatures might be attributed to the out-diffusion of Zn interstitials to the ZnO lattice. © 2007 Elsevier B.V. All rights reserved.
Source Title: Journal of Magnetism and Magnetic Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/86850
ISSN: 03048853
DOI: 10.1016/j.jmmm.2007.03.190
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