Please use this identifier to cite or link to this item: https://doi.org/10.1209/0295-5075/100/17003
Title: Unexpected improved conductivity and systematic low-temperature anomalies of a new germanium zinc indium oxide system
Authors: Sun, J.
Lai, W.S.
Yang, W. 
Gong, H. 
Issue Date: Oct-2012
Source: Sun, J., Lai, W.S., Yang, W., Gong, H. (2012-10). Unexpected improved conductivity and systematic low-temperature anomalies of a new germanium zinc indium oxide system. EPL 100 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1209/0295-5075/100/17003
Abstract: The structure, electrical conduction behaviour, optical transmittance and Haacke figure of merit (FOM) of the Ge-Zn-In-O compound are investigated for the first time. Certain Ge-Zn-In-O compounds with Ge/(Ge+Zn+In) atomic ratio even greater than 10%, denoted as a-GeZnInO, can have a surprisingly 2 times higher conductivity than indium zinc oxide (IZO) with industrial standard indium/zinc atomic ratio of 83/17 (IZO83/17). With varying Ge concentration, unexpected appearance and disappearance of the crystalline In 2O 3 phase and systematic low-temperature resistivity anomalies (semiconductor-metal transition) were observed and interpreted. © Copyright EPLA, 2012.
Source Title: EPL
URI: http://scholarbank.nus.edu.sg/handle/10635/86833
ISSN: 02955075
DOI: 10.1209/0295-5075/100/17003
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