Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2185838
Title: Thickness dependences of ferroelectric and dielectric properties in (Bi3.15Nd0.85)Ti3O12 thin films
Authors: Gao, X.S. 
Wang, J. 
Issue Date: Apr-2006
Citation: Gao, X.S., Wang, J. (2006-04). Thickness dependences of ferroelectric and dielectric properties in (Bi3.15Nd0.85)Ti3O12 thin films. Journal of Applied Physics 99 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2185838
Abstract: (Bi3.15 Nd0.85) Ti3 O12 (BNdT) thin films deposited by rf sputtering on PtTi O2 Si substrates demonstrate thickness dependences of electrical properties. The films exhibit well-established ferroelectric hysteresis loops with an almost thickness independent 2Pr of ∼23 μC cm2 at 500 kVcm. However, their nonvolatile polarization shows a monotonous decrease with increasing thickness at low operation voltages. Their coercive voltages exhibit an increase with increasing film thickness, which is accounted for by the existence of an interfacial nonferroelectric dead layer. Their dielectric permittivity demonstrates frequency and thickness dependent behavior, supporting the existence of the interfacial dead layer. The film thickness also affects both the reversible and irreversible components in the ac field dependence of relative permittivity. © 2006 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/86809
ISSN: 00218979
DOI: 10.1063/1.2185838
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