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|Title:||Structure and optical properties of ZnO/NiSi/Si|
|Citation:||Wei, R., Gong, H., Dongzhi, C. (2009). Structure and optical properties of ZnO/NiSi/Si. Electrochemical and Solid-State Letters 12 (4) : H98-H100. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3065981|
|Abstract:||High-quality ZnO films were grown on NiSi/Si as well as Si substrates, and their structural and optical properties were compared. Larger average grain size of ZnO was obtained on NiSiSi. Further, differences in Raman spectroscopy were observed; the redshift of the E2 peak was 1 cm -1 less in ZnO/NiSi/Si, and its noise-to-signal ratio was also greatly reduced. In addition, the photoluminescence emission measurement shows a narrow peak with 9 meV peak width, the mechanism of which was discussed correspondingly. © 2009 The Electrochemical Society.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
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