Structure and optical properties of ZnO/NiSi/Si

Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3065981

Title:	Structure and optical properties of ZnO/NiSi/Si
Authors:	Wei, R. Gong, H. Dongzhi, C.
Issue Date:	2009
Citation:	Wei, R., Gong, H., Dongzhi, C. (2009). Structure and optical properties of ZnO/NiSi/Si. Electrochemical and Solid-State Letters 12 (4) : H98-H100. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3065981
Abstract:	High-quality ZnO films were grown on NiSi/Si as well as Si substrates, and their structural and optical properties were compared. Larger average grain size of ZnO was obtained on NiSiSi. Further, differences in Raman spectroscopy were observed; the redshift of the E2 peak was 1 cm -1 less in ZnO/NiSi/Si, and its noise-to-signal ratio was also greatly reduced. In addition, the photoluminescence emission measurement shows a narrow peak with 9 meV peak width, the mechanism of which was discussed correspondingly. © 2009 The Electrochemical Society.
Source Title:	Electrochemical and Solid-State Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/86737
ISSN:	10990062
DOI:	10.1149/1.3065981
Appears in Collections:	Staff Publications

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