Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3065981
Title: Structure and optical properties of ZnO/NiSi/Si
Authors: Wei, R.
Gong, H. 
Dongzhi, C.
Issue Date: 2009
Source: Wei, R., Gong, H., Dongzhi, C. (2009). Structure and optical properties of ZnO/NiSi/Si. Electrochemical and Solid-State Letters 12 (4) : H98-H100. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3065981
Abstract: High-quality ZnO films were grown on NiSi/Si as well as Si substrates, and their structural and optical properties were compared. Larger average grain size of ZnO was obtained on NiSiSi. Further, differences in Raman spectroscopy were observed; the redshift of the E2 peak was 1 cm -1 less in ZnO/NiSi/Si, and its noise-to-signal ratio was also greatly reduced. In addition, the photoluminescence emission measurement shows a narrow peak with 9 meV peak width, the mechanism of which was discussed correspondingly. © 2009 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/86737
ISSN: 10990062
DOI: 10.1149/1.3065981
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