Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.materresbull.2011.07.030
Title: Resistive hysteresis in BiFeO3 thin films
Authors: Wu, J.
Wang, J. 
Xiao, D.
Zhu, J.
Keywords: A. Thin films
B. Sputtering
D. Electrical properties
Issue Date: Nov-2011
Citation: Wu, J., Wang, J., Xiao, D., Zhu, J. (2011-11). Resistive hysteresis in BiFeO3 thin films. Materials Research Bulletin 46 (11) : 2183-2186. ScholarBank@NUS Repository. https://doi.org/10.1016/j.materresbull.2011.07.030
Abstract: Capacitor-like Au/BiFeO3/SrRuO3 thin film with (1 1 1) orientation was grown on the SrTiO3 (1 1 1) substrate by radio frequency magnetic sputtering. It shows a resistive switching behavior, where a stable hysteresis in current-voltage curve was well developed by applying an optimum voltage at room temperature, and it reached the saturation at a bias voltage of 8 V. The Child's law in Vmax → 0 direction and the interface-limited Fowler-Nordheim tunneling in 0 → Vmax direction, together with the polarization reversal in the BiFeO3 barrier, are shown to involve in the observed resistive hysteresis. © 2011 Elsevier Ltd. All rights reserved.
Source Title: Materials Research Bulletin
URI: http://scholarbank.nus.edu.sg/handle/10635/86682
ISSN: 00255408
DOI: 10.1016/j.materresbull.2011.07.030
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

18
checked on Dec 5, 2018

WEB OF SCIENCETM
Citations

18
checked on Dec 5, 2018

Page view(s)

31
checked on Nov 23, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.