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|Title:||Resistive hysteresis in BiFeO3 thin films|
|Keywords:||A. Thin films|
D. Electrical properties
|Citation:||Wu, J., Wang, J., Xiao, D., Zhu, J. (2011-11). Resistive hysteresis in BiFeO3 thin films. Materials Research Bulletin 46 (11) : 2183-2186. ScholarBank@NUS Repository. https://doi.org/10.1016/j.materresbull.2011.07.030|
|Abstract:||Capacitor-like Au/BiFeO3/SrRuO3 thin film with (1 1 1) orientation was grown on the SrTiO3 (1 1 1) substrate by radio frequency magnetic sputtering. It shows a resistive switching behavior, where a stable hysteresis in current-voltage curve was well developed by applying an optimum voltage at room temperature, and it reached the saturation at a bias voltage of 8 V. The Child's law in Vmax → 0 direction and the interface-limited Fowler-Nordheim tunneling in 0 → Vmax direction, together with the polarization reversal in the BiFeO3 barrier, are shown to involve in the observed resistive hysteresis. © 2011 Elsevier Ltd. All rights reserved.|
|Source Title:||Materials Research Bulletin|
|Appears in Collections:||Staff Publications|
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