Please use this identifier to cite or link to this item:
|Title:||Resistive hysteresis in BiFeO3 thin films|
|Keywords:||A. Thin films|
D. Electrical properties
|Citation:||Wu, J., Wang, J., Xiao, D., Zhu, J. (2011-11). Resistive hysteresis in BiFeO3 thin films. Materials Research Bulletin 46 (11) : 2183-2186. ScholarBank@NUS Repository. https://doi.org/10.1016/j.materresbull.2011.07.030|
|Abstract:||Capacitor-like Au/BiFeO3/SrRuO3 thin film with (1 1 1) orientation was grown on the SrTiO3 (1 1 1) substrate by radio frequency magnetic sputtering. It shows a resistive switching behavior, where a stable hysteresis in current-voltage curve was well developed by applying an optimum voltage at room temperature, and it reached the saturation at a bias voltage of 8 V. The Child's law in Vmax → 0 direction and the interface-limited Fowler-Nordheim tunneling in 0 → Vmax direction, together with the polarization reversal in the BiFeO3 barrier, are shown to involve in the observed resistive hysteresis. © 2011 Elsevier Ltd. All rights reserved.|
|Source Title:||Materials Research Bulletin|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 16, 2018
WEB OF SCIENCETM
checked on Jun 20, 2018
checked on Jun 22, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.