Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4758383
Title: Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature
Authors: Sun, J.
Yang, W. 
Huang, Y.
Soon Lai, W.
Lee, A.Y.S.
Fu Wang, C.
Gong, H. 
Issue Date: 15-Oct-2012
Source: Sun, J., Yang, W., Huang, Y., Soon Lai, W., Lee, A.Y.S., Fu Wang, C., Gong, H. (2012-10-15). Properties of low indium content Al incorporated IZO (indium zinc oxide) deposited at room temperature. Journal of Applied Physics 112 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4758383
Abstract: A very low indium content (35 cation In) a-IZO film, denoted as IZO35/65 or a-ZIO, was fabricated at room temperature. The effect of aluminum (Al) incorporation in IZO35/65 was studied systematically, and reasonably high electrical conductivity and optical transmittance were obtained. After Al doping to an optimum extent, the conductivity was interestingly increased 3 times higher than that of a-ZIO, and this effect could not be attributed to the formation of Al clusters as a further increase in Al led to a significant drop in conductivity. Nonlinear and U-shape resistivity-temperature relationship was observed for some Al doped samples. In addition, an obvious conductivity increase accompanying by the Al 2O 3 nano-crystallites formation was observed, which provided new evidence to the insulator-metal transition model reported by Nagarajan [Nature Mater. 7, 391 (2008)] recently. © 2012 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/86669
ISSN: 00218979
DOI: 10.1063/1.4758383
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