Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp9075756
Title: Photovoltaic behavior of nanocrystalline SnS/TiO2
Authors: Wang, Y.
Gong, H. 
Fan, B. 
Hu, G. 
Issue Date: 25-Feb-2010
Citation: Wang, Y., Gong, H., Fan, B., Hu, G. (2010-02-25). Photovoltaic behavior of nanocrystalline SnS/TiO2. Journal of Physical Chemistry C 114 (7) : 3256-3259. ScholarBank@NUS Repository. https://doi.org/10.1021/jp9075756
Abstract: Nanocrystalline tin sulfide (SnS) was prepared by chemical bath deposition, and the photovoltaic behavior of SnS/TiO2 was studied. The X-ray diffraction pattern and transmission electron microscopy revealed an ∼6 nm SnS polycrystalline orthorhombic structure. The SnS film exhibited a band gap of 1.3 eV, and its absorption coefficient was more than 1 × 104 cm -1 in the visible light range. The electrical conductivity activation energy of the SnS film was 0.22 eV, determined when the sample was heated in the temperature range of 111-144°C. Although the sample was insulating at room temperature, photovoltaic behavior was found in a SnS/TiO2 structure, with an open-circuit voltage (Voc) of 471 mV, a short-circuit current density (Jsc) of 0.3 mA/cm2, and the conversion efficiency (η) of 0.1% under 1 sun illumination. The properties of SnS and the reasons behind the photovoltaic phenomenon of SnS/TiO2 are discussed. © 2010 American Chemical Society.
Source Title: Journal of Physical Chemistry C
URI: http://scholarbank.nus.edu.sg/handle/10635/86649
ISSN: 19327447
DOI: 10.1021/jp9075756
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