Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2175494
Title: Nanoscaled electrical homogeneity of indium zinc oxide films
Authors: Kumar, B. 
Gong, H. 
Gosvami, N.N.
Akkipeddi, R.
O'Shea, S.J.
Issue Date: 27-Feb-2006
Source: Kumar, B., Gong, H., Gosvami, N.N., Akkipeddi, R., O'Shea, S.J. (2006-02-27). Nanoscaled electrical homogeneity of indium zinc oxide films. Applied Physics Letters 88 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2175494
Abstract: We are able to fabricate both polycrystalline and amorphous indium zinc oxide thin films. All the thin films exhibited an n -type semiconductor behavior with room-temperature conductivities in the range of 2.5× 103 -1.58× 103 (Ω cm)-1. A nanoscaled conductivity inhomogeneity was observed in polycrystalline films by means of conducting atomic force microscopy, with morphology effect excluded by simultaneous topographic mapping. This effect has been explained in the presence of highly conducting In2 O3 and Zn2 In2 O5 nano crystalline phases imbedded in amorphous matrix. On the other hand, excellent electrical homogeneity throughout the amorphous film was observed, suggesting its promising potential in microelectronic device applications. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/86589
ISSN: 00036951
DOI: 10.1063/1.2175494
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