Multiferroic behavior of Sn-modified BiFeO3 thin films

Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3458859

Title:	Multiferroic behavior of Sn-modified BiFeO3 thin films
Authors:	Wu, J. Wang, J.
Issue Date:	2010
Citation:	Wu, J., Wang, J. (2010). Multiferroic behavior of Sn-modified BiFeO3 thin films. Electrochemical and Solid-State Letters 13 (9) : G83-G85. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3458859
Abstract:	BiFex Sn1-xO3 (x=0 and 0.05) (BFSO-x) thin films were grown in situ on Pt/ TiO2 / SiO2 /Si (100) substrates with a SrRuO3 buffer layer by off-axis radio-frequency sputtering. The effects of Sn substitution on the multiferroic behavior of BFO thin films were investigated. The leakage current of BFSO-x thin films decreases substantially with the introduction of Sn. The BiFex Sn 1-x O3 (x=0.05) thin film exhibits a lower dielectric loss (tan δ∼0.013) and a much higher dielectric permittivity (εr ∼307) as compared with those of BFO thin films, together with the polarization of 2 Pr ∼108.5 μC/ cm2. The fatigue endurance was greatly improved because of the suppression of oxygen vacancies caused by Sn substitution, while the magnetic behavior was degraded with the introduction of nonmagnetic Sn. © 2010 The Electrochemical Society.
Source Title:	Electrochemical and Solid-State Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/86574
ISSN:	10990062
DOI:	10.1149/1.3458859
Appears in Collections:	Staff Publications

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