Please use this identifier to cite or link to this item:
Title: Mechanism of defect formation and polyanion transport in solid scandium tungstate type oxides
Authors: Zhou, Y.
Prasada Rao, R. 
Adams, S. 
Keywords: Defect model
Ion conducting solids
Molecular dynamics
Polyatomic diffusion
Scandium tungstate
Issue Date: Sep-2009
Source: Zhou, Y., Prasada Rao, R., Adams, S. (2009-09). Mechanism of defect formation and polyanion transport in solid scandium tungstate type oxides. Monatshefte fur Chemie 140 (9) : 1017-1023. ScholarBank@NUS Repository.
Abstract: The unique diffusion mechanism in the novel polyatomic anion conductor scandium tungstate is studied by molecular dynamics simulations of systems with artificially induced WO4 2- defects and compared to our previous simulations of defect-free structure models. The diffusion activation energy obtained from structures with built-in defects is smaller than for the defect-free models and in the case of tungstate vacancies close to the experimental value, suggesting that extrinsic tungstate vacancies due to the volatility of WO3 are important for the experimental conductivity. The validity of the force field used for the molecular dynamics simulations is further verified by investigating the orthorhombic to monoclinic phase transition of Sc2(WO4)3 under compression. The lattice compressibility in both phases and the phase transition is qualitatively reproduced, though the simulated phase transition pressure occurred is about 0.55 GPa higher than the experimental one. © 2009 Springer-Verlag.
Source Title: Monatshefte fur Chemie
ISSN: 00269247
DOI: 10.1007/s00706-009-0140-8
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Feb 27, 2018


checked on Feb 14, 2018

Page view(s)

checked on Mar 12, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.