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|Title:||Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications|
Field effect transistor
|Citation:||Liao, L., Fan, H.J., Yan, B., Zhang, Z., Chen, L.L., Li, B.S., Xing, G.Z., Shen, Z.X., Wu, T., Sun, X.W., Wang, J., Yu, T. (2009-03-24). Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications. ACS Nano 3 (3) : 700-706. ScholarBank@NUS Repository. https://doi.org/10.1021/nn800808s|
|Abstract:||We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr 0.3Ti 0.7)O 3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO 2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 3) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide). © 2009 American Chemical Society.|
|Source Title:||ACS Nano|
|Appears in Collections:||Staff Publications|
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