Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn800808s
Title: Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications
Authors: Liao, L.
Fan, H.J.
Yan, B.
Zhang, Z.
Chen, L.L.
Li, B.S. 
Xing, G.Z.
Shen, Z.X. 
Wu, T.
Sun, X.W.
Wang, J.
Yu, T. 
Keywords: Depletion
Ferroelectric
Field effect transistor
Nanowires
Nonvolatile memory
PZT
ZnO
Issue Date: 24-Mar-2009
Citation: Liao, L., Fan, H.J., Yan, B., Zhang, Z., Chen, L.L., Li, B.S., Xing, G.Z., Shen, Z.X., Wu, T., Sun, X.W., Wang, J., Yu, T. (2009-03-24). Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications. ACS Nano 3 (3) : 700-706. ScholarBank@NUS Repository. https://doi.org/10.1021/nn800808s
Abstract: We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr 0.3Ti 0.7)O 3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO 2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10 3) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide). © 2009 American Chemical Society.
Source Title: ACS Nano
URI: http://scholarbank.nus.edu.sg/handle/10635/86341
ISSN: 19360851
DOI: 10.1021/nn800808s
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