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|Title:||Epitaxial growth of γ-Fe2O3 thin films on MgO substrates by pulsed laser deposition and their properties|
Pulsed laser deposition
|Citation:||Huang, X.L., Yang, Y., Ding, J. (2013-01). Epitaxial growth of γ-Fe2O3 thin films on MgO substrates by pulsed laser deposition and their properties. Acta Materialia 61 (2) : 548-557. ScholarBank@NUS Repository. https://doi.org/10.1016/j.actamat.2012.10.003|
|Abstract:||Epitaxial γ-Fe2O3 films were fabricated by pulsed laser deposition at 350 °C in an oxygen-rich atmosphere onto a (0 0 1) or (1 1 0) MgO substrate utilizing the substrate template effect, while the corundum structure α-Fe2O3 was obtained when the same experiment was conducted using sapphire or quartz substrate. X-ray photoelectron spectroscopy analysis and low-temperature SQUID measurements confirmed the formation of γ-Fe2O3. After annealing at 500 °C for 1 h under oxygen atmosphere, the γ-Fe2O 3 phase was still maintained. The saturation magnetization (M s) of the γ-Fe2O3 film was around 400 emu cm-3 for films 10-50 nm thick, which is in agreement with the bulk value. The ultrathin films showed an enhanced Ms value (489 emu cm -3). In particular, the Ms of the 5 nm thin film did not diminish even if it was subjected to high-temperature annealing due to the stabilizing effect of the epitaxial growth. The thin films obtained had a flat surface, which is desired for spin filter and other applications. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.|
|Source Title:||Acta Materialia|
|Appears in Collections:||Staff Publications|
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