Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.cap.2011.11.016
Title: Effects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films
Authors: Zhao, X.
Liu, E.
Ramanujan, R.V.
Chen, J. 
Keywords: Annealing
Ferromagnetism
Ni-doped ZnO thin film
Photoluminescence
Issue Date: May-2012
Source: Zhao, X., Liu, E., Ramanujan, R.V., Chen, J. (2012-05). Effects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films. Current Applied Physics 12 (3) : 834-840. ScholarBank@NUS Repository. https://doi.org/10.1016/j.cap.2011.11.016
Abstract: XPS depth profiles were used to investigate the effects of rapid thermal annealing under varying conditions on the structural, magnetic and optical properties of Ni-doped ZnO thin films. Oxidization of metallic Ni from its metallic state to two-valence oxidation state occurred in the film annealed in air at 600°C, while reduction of Ni 2+ from its two-valence oxidation state to metallic state occurred in the film annealed in Ar at 600 and 800°C. In addition, there appeared to be significant diffusion of Ni from the bottom to the top surface of the film during annealing in Ar at 800°C. Both as-deposited and annealed thin films displayed obvious room temperature ferromagnetism (RTFM) which was from metallic Ni, Ni 2+ or both with two distinct mechanisms. Furthermore, a significant improvement in saturation magnetization (M s) in the films was observed after annealing in air (M s = 0.036 μ B/Ni) or Ar (M s = 0.033 μ B/Ni) at 600°C compared to that in as-deposited film (M s = 0.017 μ B/Ni). An even higher M s value was observed in the film annealed in Ar at 800°C (M s = 0.055 μ B/Ni) compared to that at 600°C mainly due to the diffusion of Ni. The ultraviolet emission of the Ni-doped ZnO thin film was restored during annealing in Ar at 800°C, which was also attributed to the diffusion of Ni. © 2011 Elsevier B.V. All rights reserved.
Source Title: Current Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/86277
ISSN: 15671739
DOI: 10.1016/j.cap.2011.11.016
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