Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00339-012-7064-6
Title: Effect of bilayer structure and a SrRuO 3 buffer layer on ferroelectric properties of BiFeO 3 thin films
Authors: Wu, J.
Qiao, S.
Pu, C.
Xiao, D.
Wang, J. 
Zhu, J.
Issue Date: Oct-2012
Citation: Wu, J., Qiao, S., Pu, C., Xiao, D., Wang, J., Zhu, J. (2012-10). Effect of bilayer structure and a SrRuO 3 buffer layer on ferroelectric properties of BiFeO 3 thin films. Applied Physics A: Materials Science and Processing 109 (1) : 57-61. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-012-7064-6
Abstract: Effects of the BiFe 0.95Mn 0.05O 3 thickness and a SrRuO 3 (SRO) buffer layer on the microstructure and electrical properties of BiFeO 3/BiFe 0.95Mn 0.05O 3 (BFO/BFMO) bilayered thin films were investigated, where BFO/BFMO bilayered thin films were fabricated on the SRO/Pt/Ti/SiO 2/Si(100) substrate by a radio frequency sputtering. All thin films are of a pure perovskite structure with a mixture of (110) and (111) orientations regardless of the BFMO layer thickness. Dense microstructure is demonstrated in all thin films because of the introduction of BFMO layers. The SRO buffer layer can also further improve the ferroelectric properties of BFO/BFMO bilayered thin films as compared with those of these thin films without a SRO buffer layer. The BFO/BFMO bilayered thin film with a thickness ratio of 220/120 has an enhanced ferroelectric behavior of 2P r∼165.23 μC/cm 2 and 2E c∼518.56 kV/cm, together with a good fatigue endurance. Therefore, it is an effective way to enhance the ferroelectric and fatigue properties of bismuth ferrite thin films by constructing such a bilayered structure and using a SRO buffer layer. © 2012 Springer-Verlag.
Source Title: Applied Physics A: Materials Science and Processing
URI: http://scholarbank.nus.edu.sg/handle/10635/86267
ISSN: 09478396
DOI: 10.1007/s00339-012-7064-6
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