Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3040314
Title: Crystallization-induced stress in thin phase change films of different thicknesses
Authors: Guo, Q.
Li, M.
Li, Y. 
Shi, L.
Chong, T.C.
Kalb, J.A.
Thompson, C.V.
Issue Date: 2008
Citation: Guo, Q., Li, M., Li, Y., Shi, L., Chong, T.C., Kalb, J.A., Thompson, C.V. (2008). Crystallization-induced stress in thin phase change films of different thicknesses. Applied Physics Letters 93 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3040314
Abstract: We have studied crystallization-induced stress in phase change films (Ge2Sb2Te5) as a function of thickness and with and without a capping layer, by measuring the deflection of microcantilevers. The stress is found to increase with decreasing film thickness. A thin dielectric capping layer leads to a further increase in stress compared to uncapped films. This observation can be explained by the suppression of stress relaxation in the phase change film in the presence of a capping layer. High stress will affect device performance as the size of phase change memory cells decreases. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/86244
ISSN: 00036951
DOI: 10.1063/1.3040314
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