Please use this identifier to cite or link to this item:
|Title:||Crystallization-induced stress in thin phase change films of different thicknesses|
|Citation:||Guo, Q., Li, M., Li, Y., Shi, L., Chong, T.C., Kalb, J.A., Thompson, C.V. (2008). Crystallization-induced stress in thin phase change films of different thicknesses. Applied Physics Letters 93 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3040314|
|Abstract:||We have studied crystallization-induced stress in phase change films (Ge2Sb2Te5) as a function of thickness and with and without a capping layer, by measuring the deflection of microcantilevers. The stress is found to increase with decreasing film thickness. A thin dielectric capping layer leads to a further increase in stress compared to uncapped films. This observation can be explained by the suppression of stress relaxation in the phase change film in the presence of a capping layer. High stress will affect device performance as the size of phase change memory cells decreases. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 14, 2019
WEB OF SCIENCETM
checked on Jan 29, 2019
checked on Jan 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.