Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4823551
Title: Compositionally matched nitrogen-doped Ge2Sb2Te 5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory
Authors: Chia Tan, C.
Shi, L.
Zhao, R.
Guo, Q.
Li, Y. 
Yang, Y.
Chong Chong, T.
Malen, J.A.
Ong, W.-L.
Schlesinger, T.E.
Bain, J.A.
Issue Date: 23-Sep-2013
Citation: Chia Tan, C., Shi, L., Zhao, R., Guo, Q., Li, Y., Yang, Y., Chong Chong, T., Malen, J.A., Ong, W.-L., Schlesinger, T.E., Bain, J.A. (2013-09-23). Compositionally matched nitrogen-doped Ge2Sb2Te 5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory. Applied Physics Letters 103 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4823551
Abstract: A compositionally matched superlattice-like (SLL) structure comprised of Ge2Sb2Te5 (GST) and nitrogen-doped GST (N-GST) was developed to achieve both low current and high endurance Phase Change Random Access Memory (PCRAM). N-GST/GST SLL PCRAM devices demonstrated ∼37% current reduction compared to single layered GST PCRAM and significantly higher write/erase endurances of ∼108 compared to ∼106 for GeTe/Sb2Te3 SLL devices. The improvements in endurance are attributed to the compositionally matched N-GST/GST material combination that lowers the diffusion gradient between the layers and the lower crystallization-induced stress in the SLL as revealed by micro-cantilever stress measurements. © 2013 AIP Publishing LLC.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/86227
ISSN: 00036951
DOI: 10.1063/1.4823551
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