Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.4823551
| Title: | Compositionally matched nitrogen-doped Ge2Sb2Te 5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory | Authors: | Chia Tan, C. Shi, L. Zhao, R. Guo, Q. Li, Y. Yang, Y. Chong Chong, T. Malen, J.A. Ong, W.-L. Schlesinger, T.E. Bain, J.A. |
Issue Date: | 23-Sep-2013 | Citation: | Chia Tan, C., Shi, L., Zhao, R., Guo, Q., Li, Y., Yang, Y., Chong Chong, T., Malen, J.A., Ong, W.-L., Schlesinger, T.E., Bain, J.A. (2013-09-23). Compositionally matched nitrogen-doped Ge2Sb2Te 5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory. Applied Physics Letters 103 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4823551 | Abstract: | A compositionally matched superlattice-like (SLL) structure comprised of Ge2Sb2Te5 (GST) and nitrogen-doped GST (N-GST) was developed to achieve both low current and high endurance Phase Change Random Access Memory (PCRAM). N-GST/GST SLL PCRAM devices demonstrated ∼37% current reduction compared to single layered GST PCRAM and significantly higher write/erase endurances of ∼108 compared to ∼106 for GeTe/Sb2Te3 SLL devices. The improvements in endurance are attributed to the compositionally matched N-GST/GST material combination that lowers the diffusion gradient between the layers and the lower crystallization-induced stress in the SLL as revealed by micro-cantilever stress measurements. © 2013 AIP Publishing LLC. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/86227 | ISSN: | 00036951 | DOI: | 10.1063/1.4823551 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.