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|Title:||Compositionally matched nitrogen-doped Ge2Sb2Te 5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory|
|Authors:||Chia Tan, C.|
Chong Chong, T.
|Citation:||Chia Tan, C., Shi, L., Zhao, R., Guo, Q., Li, Y., Yang, Y., Chong Chong, T., Malen, J.A., Ong, W.-L., Schlesinger, T.E., Bain, J.A. (2013-09-23). Compositionally matched nitrogen-doped Ge2Sb2Te 5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory. Applied Physics Letters 103 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4823551|
|Abstract:||A compositionally matched superlattice-like (SLL) structure comprised of Ge2Sb2Te5 (GST) and nitrogen-doped GST (N-GST) was developed to achieve both low current and high endurance Phase Change Random Access Memory (PCRAM). N-GST/GST SLL PCRAM devices demonstrated ∼37% current reduction compared to single layered GST PCRAM and significantly higher write/erase endurances of ∼108 compared to ∼106 for GeTe/Sb2Te3 SLL devices. The improvements in endurance are attributed to the compositionally matched N-GST/GST material combination that lowers the diffusion gradient between the layers and the lower crystallization-induced stress in the SLL as revealed by micro-cantilever stress measurements. © 2013 AIP Publishing LLC.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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