A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4790380

Title:	A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films
Authors:	Wu, J. Qiao, S. Wang, J. Xiao, D. Zhu, J.
Issue Date:	4-Feb-2013
Citation:	Wu, J., Qiao, S., Wang, J., Xiao, D., Zhu, J. (2013-02-04). A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films. Applied Physics Letters 102 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4790380
Abstract:	A giant remanent polarization of BiFeO3 thin films is obtained by introducing Zn and Mn, and Bi(Fe0.93Mn0.05Zn 0.02)O3 (BFMZO) thin films were prepared on SrRuO 3-buffered silicon substrates by the radio-frequency sputtering. An (111) orientation is induced in such a film because of the introduction of an SrRuO3 buffer layer. An enhanced ferroelectric behavior of 2P r ∼ 235 μC/cm2 and 2Ec ∼ 612 kV/cm is observed in BFMZO thin films, together with a fatigue-free behavior. As a result, the introduction of Zn and Mn is a good way to improve the electrical behavior of BiFeO3 thin films. © 2013 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/86168
ISSN:	00036951
DOI:	10.1063/1.4790380
Appears in Collections:	Staff Publications

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