Please use this identifier to cite or link to this item:
|Title:||A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films|
|Citation:||Wu, J., Qiao, S., Wang, J., Xiao, D., Zhu, J. (2013-02-04). A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films. Applied Physics Letters 102 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4790380|
|Abstract:||A giant remanent polarization of BiFeO3 thin films is obtained by introducing Zn and Mn, and Bi(Fe0.93Mn0.05Zn 0.02)O3 (BFMZO) thin films were prepared on SrRuO 3-buffered silicon substrates by the radio-frequency sputtering. An (111) orientation is induced in such a film because of the introduction of an SrRuO3 buffer layer. An enhanced ferroelectric behavior of 2P r ∼ 235 μC/cm2 and 2Ec ∼ 612 kV/cm is observed in BFMZO thin films, together with a fatigue-free behavior. As a result, the introduction of Zn and Mn is a good way to improve the electrical behavior of BiFeO3 thin films. © 2013 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 14, 2018
WEB OF SCIENCETM
checked on Nov 6, 2018
checked on Nov 2, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.