Please use this identifier to cite or link to this item: https://doi.org/10.1142/S1793604708000447
Title: RF sputtered Bismuth ferrite thin films: Effect of annealing duration
Authors: Zheng, R.Y. 
Wang, J. 
Ramakrishna, S. 
Keywords: annealing condition
BFO thin films
ferroelectricity
Issue Date: Dec-2008
Citation: Zheng, R.Y., Wang, J., Ramakrishna, S. (2008-12). RF sputtered Bismuth ferrite thin films: Effect of annealing duration. Functional Materials Letters 1 (3) : 221-224. ScholarBank@NUS Repository. https://doi.org/10.1142/S1793604708000447
Abstract: Polycrystalline BFO thin films of similar thickness but subjected to different annealing durations (2 hr and 4 hr) were deposited on SRO/Pt/TiO 2/SiO 2/Si substrates via RF sputtering. Phase identification by using X-ray diffractions confirms the pure BFO phase of the thin films fabricated. PolarizationElectric Field (PE) loop study measured at different frequencies shows that a longer annealing duration led to the formation of space charges in the BFO thin films and thus caused a poor ferroelectric property observed in the hysteresis loop. The results of leakage current measurement for the two BFO films are consistent with the ferroelectric measurement, where a higher leakage current is demonstrated by the BFO film annealed for 4 hr. © 2008 World Scientific Publishing Company.
Source Title: Functional Materials Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/85605
ISSN: 17936047
DOI: 10.1142/S1793604708000447
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