Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn102658a
Title: Reliably counting atomic planes of few-layer graphene (n > 4)
Authors: Koh, Y.K. 
Bae, M.-H.
Cahill, D.G.
Pop, E.
Keywords: Absorbance of monolayer graphene
Electrostatic interlayer screening
Few-layer graphene
Field-effect mobility of carriers
Graphene thickness
Number of graphene layers
Raman spectroscopy
Issue Date: 25-Jan-2011
Source: Koh, Y.K., Bae, M.-H., Cahill, D.G., Pop, E. (2011-01-25). Reliably counting atomic planes of few-layer graphene (n > 4). ACS Nano 5 (1) : 269-274. ScholarBank@NUS Repository. https://doi.org/10.1021/nn102658a
Abstract: We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene (FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring the ratio of the integrated intensity of the G graphene peak and the optical phonon peak of Si, I(G)/I(Si), and is particularly useful in the range n > 4 where few methods exist. We compare our results with atomic force microscopy (AFM) measurements and Fresnel equation calculations. Then, we apply our method to unambiguously identify n of FLG devices on SiO2 and find that the mobility (μ ≈ 2000 cm 2 V-1 s-1) is independent of layer thickness for n > 4. Our findings suggest that electrical transport in gated FLG devices is dominated by carriers near the FLG/SiO2 interface and is thus limited by the environment, even for n > 4. © 2011 American Chemical Society.
Source Title: ACS Nano
URI: http://scholarbank.nus.edu.sg/handle/10635/85600
ISSN: 19360851
DOI: 10.1021/nn102658a
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