Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.materresbull.2006.10.007
Title: Properties of amorphous Si thin film anodes prepared by pulsed laser deposition
Authors: Xia, H.
Tang, S. 
Lu, L. 
Keywords: A. Amorphous materials
A. Thin film
B. Electrochemical properties
B. Laser deposition
C. Electrochemical measurements
Issue Date: 3-Jul-2007
Citation: Xia, H., Tang, S., Lu, L. (2007-07-03). Properties of amorphous Si thin film anodes prepared by pulsed laser deposition. Materials Research Bulletin 42 (7) : 1301-1309. ScholarBank@NUS Repository. https://doi.org/10.1016/j.materresbull.2006.10.007
Abstract: Amorphous Si (a-Si) thin film anodes were prepared by pulsed laser deposition (PLD) at room temperature. Structures and properties of the thin films were investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and electrochemical measurements. Galvanostatic charge/discharge tests of half cells using lithium counter electrode were conducted at a constant current density of 100 μA/cm2 in different voltage windows. Cyclic voltammetry (CV) was obtained between 0 and 1.5 V at various scan rates from 0.1 to 2 mV/s. The apparent diffusion coefficient (DLi) calculated from the CV measurements was about ∼10-13 cm2/s. The Si thin film anode was also successfully coupled with LiCoO2 thin film cathode. The a-Si/LiCoO2 full cell showed stable cycle performance between 1 and 4 V. © 2006 Elsevier Ltd. All rights reserved.
Source Title: Materials Research Bulletin
URI: http://scholarbank.nus.edu.sg/handle/10635/85581
ISSN: 00255408
DOI: 10.1016/j.materresbull.2006.10.007
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