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Title: Oxygen-vacancy-mediated negative differential resistance in la and Mg co-substituted BiFeO 3 thin film
Authors: Ke, Q.
Kumar, A.
Lou, X. 
Zeng, K. 
Wang, J. 
Issue Date: 15-Dec-2011
Citation: Ke, Q., Kumar, A., Lou, X., Zeng, K., Wang, J. (2011-12-15). Oxygen-vacancy-mediated negative differential resistance in la and Mg co-substituted BiFeO 3 thin film. Journal of Applied Physics 110 (12) : -. ScholarBank@NUS Repository.
Abstract: The conductive characteristics of Bi 0.9La 0.1Fe 0.96Mg 0.04O 3 (BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the thin film, where a leakage current peak occurs upon application of a downward electric field above 80 °C. The origin of the NDR behavior is shown to be related to the ionic defect of oxygen vacancies (V O ••) present in the film. On the basis of analyzing the leakage mechanism and surface potential behavior, the NDR behavior can be understood by considering the competition between the polarized distribution and neutralization of V O ••. © 2011 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.3668119
Appears in Collections:Staff Publications

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