Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4733982
Title: Negative capacitance induced by redistribution of oxygen vacancies in the fatigued BiFeO 3-based thin film
Authors: Ke, Q.
Lou, X.
Yang, H.
Kumar, A.
Zeng, K. 
Wang, J. 
Issue Date: 9-Jul-2012
Citation: Ke, Q., Lou, X., Yang, H., Kumar, A., Zeng, K., Wang, J. (2012-07-09). Negative capacitance induced by redistribution of oxygen vacancies in the fatigued BiFeO 3-based thin film. Applied Physics Letters 101 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4733982
Abstract: The capacitance dispersion in La and Mg co-substituted BiFeO 3 thin film has been studied at different stages of polarization switching. A negative capacitance (NC) behavior is observed in the sample that is fatigued above 10 9 switching cycles. The origin of the NC is investigated through analyzing relaxation processes and charge transport kinetics by admittance spectroscopy. An activation energy of ∼0.6 eV and a zero field mobility μ 0 5.33 ± 0.02 × 10 - 13 m 2 / Vs are thus obtained. A physical mechanism is proposed to explain this behavior. It involves a redistribution of oxygen vacancies, which are trapped at the film/electrode interface during the fatigue process. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/85478
ISSN: 00036951
DOI: 10.1063/1.4733982
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