Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jallcom.2006.02.109
Title: Measurement of residual stress of PZT thin film on Si(1 0 0) by synchrotron X-ray rocking curve technique
Authors: Yu, Y.H.
Lai, M.O. 
Lu, L. 
Yang, P. 
Keywords: Laser processing
PZT
Residual stresses
Synchrotron radiation
Thin film
Issue Date: 31-Jan-2008
Citation: Yu, Y.H., Lai, M.O., Lu, L., Yang, P. (2008-01-31). Measurement of residual stress of PZT thin film on Si(1 0 0) by synchrotron X-ray rocking curve technique. Journal of Alloys and Compounds 449 (1-2) : 56-59. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2006.02.109
Abstract: (l 0 0) oriented Pb(Zr,Ti)O3 (PZT) and LaNiO3 (LNO) thin films were grown on SiO2/(1 0 0) Si substrate by pulsed laser deposition. The bending of the crystal planes of single crystal substrates is assessed by high-resolution X-ray rocking curve technique (HRRC) with a high quality monochromatic and high intensity synchrotron radiation. The residual stress is then calculated from the change in curvature of the substrate before and after depositing the film based on the well-known modified Stoney's equation. More reliable results can be achieved because they are not affected by surface morphology and reflectivity of the films. HRRC can be applied to all kinds of thin films including randomly oriented polycrystalline, oriented and amorphous films. The residual stress of the (l 0 0) PZT thin films on SiO2/(1 0 0) silicon substrate was measured to be 189 MPa. © 2006 Elsevier B.V. All rights reserved.
Source Title: Journal of Alloys and Compounds
URI: http://scholarbank.nus.edu.sg/handle/10635/85378
ISSN: 09258388
DOI: 10.1016/j.jallcom.2006.02.109
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