Please use this identifier to cite or link to this item: https://doi.org/10.1088/0960-1317/16/4/025
Title: Low stress PECVD - SiNx layers at high deposition rates using high power and high frequency for MEMS applications
Authors: Iliescu, C.
Tay, F.E.H. 
Wei, J.
Issue Date: 1-Apr-2006
Citation: Iliescu, C., Tay, F.E.H., Wei, J. (2006-04-01). Low stress PECVD - SiNx layers at high deposition rates using high power and high frequency for MEMS applications. Journal of Micromechanics and Microengineering 16 (4) : 869-874. ScholarBank@NUS Repository. https://doi.org/10.1088/0960-1317/16/4/025
Abstract: The paper reports a new fabrication method for low stress SiNx layers at high deposition rates in a PECVD reactor using high power and high frequency (13.56 MHz) and their MEMS applications. By increasing the deposition power at 600 W in high frequency mode, a decrease of the tensile residual stress to values between 0 and 20 MPa was noticed. Meanwhile, the high power, which promotes a high dissociation of gases, generates a high deposition rate (in the range 250 to 350 nm min-1). In addition, the paper presents the influence of other important parameters that affect the residual stress and deposition rate such as pressure and SiH4, NH3 and N 2 flow rates. SiNx layers fabricated at high power in high frequency mode were successfully used in two classical MEMS applications: fabrication of the masking layer for anisotropic wet etching in KOH solution and fabrication of a low stress cantilever. © 2006 IOP Publishing Ltd.
Source Title: Journal of Micromechanics and Microengineering
URI: http://scholarbank.nus.edu.sg/handle/10635/85365
ISSN: 09601317
DOI: 10.1088/0960-1317/16/4/025
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