Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00339-010-5918-3
Title: Influence of oxygen pressure on the ferroelectric properties of BiFeO 3 thin films on LaNiO3/Si substrates via laser ablation
Authors: Yan, F.
Zhu, T.J.
Lai, M.O. 
Lu, L. 
Issue Date: Dec-2010
Citation: Yan, F., Zhu, T.J., Lai, M.O., Lu, L. (2010-12). Influence of oxygen pressure on the ferroelectric properties of BiFeO 3 thin films on LaNiO3/Si substrates via laser ablation. Applied Physics A: Materials Science and Processing 101 (4) : 651-654. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-010-5918-3
Abstract: BiFeO3(BFO) thin films of about 200 nm in thickness have been successfully grown on oxide bottom electrode, LaNiO3(LNO), via pulsed laser ablation. X-ray diffraction spectrum of the as-deposited BFO film reveals a (100) preferred textured structure. The morphology of the BFO film is found to be strongly dependent on oxygen partial pressure in laser ablation. A saturated hysteresis loop with remanent polarization of 42 μC/cm2 and coercive field of 100 kV/cm is obtained at the film deposition at 50 mTorr. The dielectric properties have also been obtained based on the influence of the oxygen pressure. © 2010 Springer-Verlag.
Source Title: Applied Physics A: Materials Science and Processing
URI: http://scholarbank.nus.edu.sg/handle/10635/85319
ISSN: 09478396
DOI: 10.1007/s00339-010-5918-3
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