Influence of oxygen pressure on the ferroelectric properties of BiFeO 3 thin films on LaNiO3/Si substrates via laser ablation

Abstract

BiFeO3(BFO) thin films of about 200 nm in thickness have been successfully grown on oxide bottom electrode, LaNiO3(LNO), via pulsed laser ablation. X-ray diffraction spectrum of the as-deposited BFO film reveals a (100) preferred textured structure. The morphology of the BFO film is found to be strongly dependent on oxygen partial pressure in laser ablation. A saturated hysteresis loop with remanent polarization of 42 μC/cm2 and coercive field of 100 kV/cm is obtained at the film deposition at 50 mTorr. The dielectric properties have also been obtained based on the influence of the oxygen pressure. © 2010 Springer-Verlag.