Please use this identifier to cite or link to this item:
|Title:||Influence of oxygen pressure on the ferroelectric properties of BiFeO 3 thin films on LaNiO3/Si substrates via laser ablation|
|Citation:||Yan, F., Zhu, T.J., Lai, M.O., Lu, L. (2010-12). Influence of oxygen pressure on the ferroelectric properties of BiFeO 3 thin films on LaNiO3/Si substrates via laser ablation. Applied Physics A: Materials Science and Processing 101 (4) : 651-654. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-010-5918-3|
|Abstract:||BiFeO3(BFO) thin films of about 200 nm in thickness have been successfully grown on oxide bottom electrode, LaNiO3(LNO), via pulsed laser ablation. X-ray diffraction spectrum of the as-deposited BFO film reveals a (100) preferred textured structure. The morphology of the BFO film is found to be strongly dependent on oxygen partial pressure in laser ablation. A saturated hysteresis loop with remanent polarization of 42 μC/cm2 and coercive field of 100 kV/cm is obtained at the film deposition at 50 mTorr. The dielectric properties have also been obtained based on the influence of the oxygen pressure. © 2010 Springer-Verlag.|
|Source Title:||Applied Physics A: Materials Science and Processing|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 7, 2018
WEB OF SCIENCETM
checked on Nov 21, 2018
checked on Nov 2, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.